Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus
Patent
1995-03-23
1996-01-30
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
117 88, 117204, C30B 3500
Patent
active
054873584
ABSTRACT:
A process for growing a silicon epitaxial layer on the main surface of a silicon substrate wafer using an apparatus for growing a silicon epitaxial layer is disclosed. The apparatus comprises a central injector passing a flow of a reactive gas past a central part of a horizontal chamber, peripheral injectors passing peripheral flows of the reactive gas past peripheral part of the chamber, a first controller controlling the mass flows of at least one of the silicon source, the dopant and hydrogen of the reactive gas fed by the central injector, and a second controller controlling the mass flows of at least one of the silicon source, the dopant and hydrogen fed by the peripheral injectors independently of the first controller. The process comprises control steps independently controlling the mass flows of the reactive gas by the first controller and the second controller.
REFERENCES:
patent: 3854443 (1974-12-01), Baerg
patent: 4062706 (1977-12-01), Ruehrwein
patent: 4421786 (1983-12-01), Mahajan et al.
patent: 5134965 (1992-08-01), Tokuda et al.
patent: 5227330 (1993-07-01), Agnello et al.
patent: 5390626 (1995-02-01), Nagasawa et al.
patent: 5402748 (1995-04-01), Takai et al.
Nagoya Takatoshi
Ohta Yutaka
Breneman R. Bruce
Garrett Felisa
Shin-Etsu Handotai & Co., Ltd.
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