Method for the manufacturing of a thyristor with defined lateral

Details Method for the manufacturing of a thyristor with defined lateral Method for the manufacturing of a thyristor with defined lateral

Filed on

1991-07-01

Date issued

1993-04-20

Examiner

Quach, T. N.

Patent Class

Fishing, trapping, and vermin destroying

Other Related Categories

437203, 437143, 437 60, 437918, H01L 21332

Type

Patent

Status

active

Patent number

052042731

Description

ABSTRACT:
Thyristor with defined lateral resistor and method for the manufacturing thereof. The thyristor has a resistor area (5) for the generation of a lateral resistor, for example between an emitter field (8) and an auxiliary emitter field (7), whereby the resistor are (5) has a defined lower doping concentration than the layer (2) surrounding it. The defined lower doping concentration is generated by recesses (3) in an occupation layer and can be adjusted by the ratio of the widths alternately arranged recesses (3) and ribs (4). The recess (3) and the ribs (4) are generated either by diffusion and subsequent etching or by implantation with an implantation mask, before the deposition layer is driven into the semiconductor body of the thyristor by heat supply from a surface.

REFERENCES:
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patent: 4514898 (1985-05-01), Przybysz et al.
patent: 4516315 (1985-05-01), Przybysz et al.
patent: 4555845 (1985-12-01), Przybysz
patent: 4605451 (1986-08-01), Garrett
patent: 4757031 (1988-07-01), Kuhnert et al.
patent: 4927772 (1990-05-01), Arthur et al.
patent: 4929563 (1990-05-01), Tsunoda et al.
patent: 5057440 (1991-10-01), Roggwiller
patent: 5077224 (1991-12-01), Schwarzbauer et al.

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