Patent
1976-08-16
1977-06-28
Edlow, Martin H.
357 63, 357 61, 357 23, 357 49, H01L 3300
Patent
active
040329500
ABSTRACT:
Disclosed is a process for fabricating chromium-doped semi-insulating epitaxial layers of gallium arsenide which includes contacting a gallium arsenide substrate with a chromium-doped saturated solution of gallium arsenide in gallium and maintaining the solution at a relatively low liquid phase epitaxial (LPE) deposition temperature on the order of about 750.degree.-850.degree. C.
REFERENCES:
patent: 3308354 (1967-03-01), Tucker
patent: 3355637 (1967-11-01), Johnson
patent: 3500139 (1970-03-01), Frouin
Light et al., I.B.M. Tech. Discl. Bull., vol. 9, No. 10, Mar. 1967, p. 1446.
Kamath G. Sanjiv
Smith Bradley W.
Bethurum William J.
Edlow Martin H.
Hughes Aircraft Company
MacAllister W. H.
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