Patent
1976-01-15
1977-06-28
Edlow, Martin H.
357 49, 357 55, 357 56, H01L 3300
Patent
active
040329445
ABSTRACT:
A semiconductor device having a p-n junction for emitting incoherent radiation. According to the invention, one or several diodes are obtained in the same semiconductor body and starting from a substrate having a diffused or epitaxial layer of opposite conductivity types, by dividing the layer into one or more active regions by one or more grooves and bounding said islands by a cleavage plane at right angles to the p-n junction. Of the grooves, at least a part extends substantially parallel to the second surface. The body and preferably also the grooves are covered with an insulating layer in which a contact window is provided on the active regions and an electrode layer is provided over substantially the whole surface. As a result, small diodes having a large surface brightness are obtained on a body of handleable dimensions having a flat surface with a comparatively low current consumption.
REFERENCES:
patent: 3479614 (1969-11-01), Ashkin
patent: 3495140 (1970-02-01), Cornely
patent: 3930912 (1976-01-01), Wisbey
patent: 3932927 (1976-01-01), Grenon
patent: 3974514 (1976-08-01), Kressel
patent: 3978428 (1976-08-01), Burnham
Shih & Blum, I.B.M. Tech. Discl. Bull., vol. 15, No. 7, Dec. 1972, p. 2345.
Shih & Blum, I.B.M. Tech. Discl. Bull., vol. 13, No. 9, Feb. 1971, p. 2494.
Tijburg Rudolf Paulus
Van Dongen Teunis
Edlow Martin H.
Trifari Frank R.
U.S. Philips Corporation
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