Semiconductor laser device and method of fabricating semiconduct

Details Semiconductor laser device and method of fabricating semiconduct Semiconductor laser device and method of fabricating semiconduct

1995-12-08

1998-11-10

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

438 41, 438 44, H01S 319, H01L 2120

Patent

active

058355162

ABSTRACT:
A method of fabricating a semiconductor laser device includes successively forming an active layer and upper cladding layers on a lower cladding layer, etching and removing portions except regions of the upper cladding layers where a current is to flow to form a stripe-shaped ridge structure, and forming a buffer layer comprising Al.sub.x Ga.sub.1-x As having an Al composition ratio x of 0 to 0.3 on a surface of the upper cladding layers exposed by the etching and forming a current blocking layer of first conductivity type Al.sub.y Ga.sub.1-y As having an Al composition ratio y of at least 0.5 on the buffer layer to bury portions of the upper cladding layers which are not removed by the etching process. Therefore, since the layer grown on the upper cladding layer exposed by etching of AlGaAs or GaAs having a low Al composition ratio (0-0.3), three-dimensional growth of and crystalline defects in the buffer layer are suppressed. Current leakage is suppressed, so that a semiconductor laser device having a low threshold current and a high efficiency is fabricated with a stable yield.

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Kish et al., "Planar native-oxide buried-mesa Al.sub.x GA.sub.1-x AS-In.sub.0.5 (Al.sub.y Ga.sub.1-y).sub.0.5 P-In.sub.0.5 (Al.sub.z Ga.sub.1-z).sub.0.5 P visible-spectrum laser diodes", J. Appl. phys., vol. 71, No. 6, Mar. 15, 1992, pp. 2521-2525.
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