Process and structure of an integrated vacuum microelectronic de

Electric lamp or space discharge component or device manufacturi – Process – With assembly or disassembly

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

445 50, 445 51, 437927, H01J 912

Patent

active

052037312

ABSTRACT:
The present invention relates generally to a new integrated Vacuum Microelectronic Device (VMD) and a method for making the same. Vacuum Microelectronic Devices require several unique three dimensional structures: a sharp field emission tip, accurate alignment of the tip inside a control grid structure in a vacuum environment, and an anode to collect electrons emitted by the tip. Also disclosed is a new structure and a process for forming diodes, triodes, tetrodes, pentodes and other similar structures. The final structure made can also be connected to other similar VMD devices or to other electronic devices.

REFERENCES:
patent: 3453478 (1969-07-01), Shoulders et al.
patent: 3497929 (1970-03-01), Shoulders et al.
patent: 3665241 (1972-05-01), Spindt et al.
patent: 3755704 (1973-08-01), Spindt et al.
patent: 3855499 (1974-12-01), Yamada et al.
patent: 3921022 (1975-11-01), Levine
patent: 3970887 (1976-07-01), Smith et al.
patent: 3998678 (1976-12-01), Fukase et al.
patent: 4008412 (1977-02-01), Yito et al.
patent: 4307507 (1981-12-01), Gray et al.
patent: 4309242 (1982-01-01), Te Velde
patent: 4513308 (1985-04-01), Greene et al.
patent: 4721885 (1988-01-01), Brodie
patent: 4766340 (1988-08-01), van der Mast et al.
patent: 4857799 (1989-08-01), Spindt et al.
patent: 4889588 (1989-12-01), Fior
patent: 4925805 (1990-05-01), Van Ommen et al.
patent: 5100355 (1992-03-01), Marcus et al.
C. A. Spindt, "A Thin-Film Field-Emission Cathode," J. Appl. Phys., vol. 39, No. 7, pp. 3504-3505 (1968).
G. J. Campisi, et al., "Microfabrication of Field Emission Devices for Vacuum Integrated Circuits Using Orientation Dependent Etching," Material Res. Soc. Symp. Proc. vol. 76, pp. 67-72 (1987).
I. Brodie, "Physical Considerations in Vacuum Microelectronics Devices," IEEE Transactions on Electron Devices, vol. 36, No. 11, pp. 2641-2644 (Nov., 1989).
W. J. Orvis, et al., "Modeling and Fabricating Micro-Cavity Integrated Vacuum Tubes," IEEE Transactions on Electron Devices, vol. 36, No. 11 pp. 2651-2658 (Nov., 1989).
H. H. Busta, et al., "Field Emission from tungsten-Clad Silicon Pyramids," IEEE Transactions on Electron Devices, vol. 36, No. 11, pp. 2679-2685 (Nov., 1989).
R. A. Lee, et al., "Semiconductor Fabrication Technology Applied to Micrometer Valves," IEEE Transactions on Electron Devices, vol. 36, No. 11, pp. 2703-2708 (Nov., 1989).
N. A. Cade, et al., "Wet Etching of Cusp Structures for Field-Emission Devices," IEEE Transactions on Electron Devices, vol. 36, No. 11, pp. 2709-2714 (Nov., 1989).
R. B. Marcus, et al., "Formation of Atomically Sharp Silicon Needles," IEDM, pp. 884-886 (1989).
W. J. Orvis et al., "A Progress Report on the Livermore Miniature Vacuum Tube Project," IEEE, IEDM, pp. 529-531 (1989).
B. Goodman, "Return of the Vacuum Tube," Discover Magazine, pp. 55-58 (Mar., 1990).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Process and structure of an integrated vacuum microelectronic de does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process and structure of an integrated vacuum microelectronic de, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process and structure of an integrated vacuum microelectronic de will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1521945

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.