Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area
Patent
1996-11-14
1998-11-10
Meier, Stephen
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With enlarged emitter area
257407, 257412, 257763, H01L 2354
Patent
active
058348271
ABSTRACT:
Electronic devices are provided with electrically conductive interconnections which are formed on the insulator material. Such electronic devices include, for example, thin film semiconductor devices (TFT), metal-insulator-metallic type non-wiring elements (MIM), solar cells, Large Scale Integration devices (LSI) or printed-wiring boards. At least a part of the electrically conductive interconnections are made of .alpha.-structure tantalum (Ta) which contains hydrogen. The .alpha.-structure tantalum does not have cubical crystals in its crystal system, but rather has body-centered cubes (bcc). The resistivity of the .alpha.-structure tantalum is from about 20 .mu..OMEGA. centimeters to about 60 .mu..OMEGA. centimeters. When hydrogen is included within this .alpha.-structure tantalum film, small amounts of nitrogen may be contained along with the hydrogen in the film. When a semiconductor layer is directly formed on the lower conductive layer, the upper conductive layer contains, as a primary component, the hydrogen contained .alpha.-structure tantalum.
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Ohshima, H., et al. "Full-Color LCDs with Completely Integrated Drivers Utilizing Low-Temperature Poly-Sl TFTs," SID 93 Digest. 1993, pp. 387-390.
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Higashi Seiichiro
Inoue Satoshi
Kitawada Kiyofumi
Matsueda Yojiro
Matsuo Minoru
Meier Stephen
Seiko Epson Corporation
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