Process of emitting highly spin-polarized electron beam and semi

Details Process of emitting highly spin-polarized electron beam and semi Process of emitting highly spin-polarized electron beam and semi

1997-10-30

1998-11-10

Guay, John

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Low workfunction layer for electron emission

250423P, 313542, H01L 2920

Patent

active

058347917

ABSTRACT:
A process of producing a highly spin-polarized electron beam, including the steps of applying a light energy to a semiconductor device comprising a first compound semiconductor layer having a first lattice constant and a second compound semiconductor layer having a second lattice constant different from the first lattice constant, the second semiconductor layer being in junction contact with the first semiconductor layer to provide a strained semiconductor heterostructure, a magnitude of mismatch between the first and second lattice constants defining an energy splitting between a heavy hole band and a light hole band in the second semiconductor layer, such that the energy splitting is greater than a thermal noise energy in the second semiconductor layer in use; and extracting the highly spin-polarized electron beam from the second semiconductor layer upon receiving the light energy. A semiconductor device for emitting, upon receiving a light energy, a highly spin-polarized electron beam, including a first compound semiconductor layer formed of gallium arsenide phosphide, GaAs.sub.1-x P.sub.x, and having a first lattice constant; and a second compound semiconductor layer provided on the first semiconductor layer, the second semiconductor layer having a second lattice constant different from the first lattice constant and a thickness, t, smaller than the thickness of the first semiconductor layer.

REFERENCES:
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patent: 5117469 (1992-05-01), Cheung et al.
patent: 5132746 (1992-07-01), Mendez et al.
T. Maruyama, et al., "Observation of Strain-Enhanced Electron-Spin Polarization in Photoemission from InGaAs," Physical Review Letters, vol. 66, No. 18, pp. 2376-2379.
W. Hartmann, et al., "A Source of Polarized Electrons Based on Photoemission of GaAsP," Nuclear Instruments and Methods in Physical Research A286, No. 1/2, Jan. 1990, pp. 1-8.
Sze, "Physics of Semiconductor Devices," 1981, p. 706.

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