Programming method for nonvolatile memories

Details Programming method for nonvolatile memories Programming method for nonvolatile memories

1998-12-18

1999-09-14

Le, Vu A.

Static information storage and retrieval

Floating gate

Particular biasing

36518524, 36518528, G11C 700

Patent

active

059532513

ABSTRACT:
A programming method for a floating gate memory circuit (100) includes a block erase (step 81) in which a first programming signal is applied to memory cells of a selected block of the memory to store a first value of charge in the memory cells of the block. Data is programmed by applying a second programming signal to a first memory cell to store a second value in the first memory cell (step 83). A third programming signal is applied to a second memory cell to write a correction charge that compensates for a change in the first value of charge induced by the second programming signal (step 84).

REFERENCES:
patent: 5047981 (1991-09-01), Gill et al.
patent: 5432738 (1995-07-01), Watsuji et al.
patent: 5790456 (1998-08-01), Haddad

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