Selective etch method for II-VI semiconductors

Details Selective etch method for II-VI semiconductors Selective etch method for II-VI semiconductors

1996-10-07

1998-11-10

Dutton, Brian

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Mesa formation

438 41, H01L 2100

Patent

active

058343300

ABSTRACT:
A II-VI semiconductor device is fabricated using a selective etchant in the form of aqueous solution of HX where X is Cl or Br. The II-VI semiconductor device is composed of a number of layers. Selective etching can be enabled by introducing Mg into one of the semiconductor layers. The resultant device may include a semiconductor layer containing Mg.

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