Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Patent
1996-08-23
1999-01-12
Chang, Joni
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
438 29, 148DIG91, H01L 2100
Patent
active
058588078
ABSTRACT:
A method of manufacturing a liquid crystal display device, which comprises the steps of forming an amorphous silicon layer on a substrate, and irradiating, by way of scanning, a linear energy beam onto the amorphous silicon layer, thereby converting an irradiated portion of the an amorphous silicon layer into a polycrystalline silicon layer. The irradiation and scanning of the linear energy beam are performed plural times while shifting the scanning of the linear energy beam so as to allow the irradiation of the linear energy beam to cover every region of the amorphous silicon layer that is desired to be converted into a polycrystalline silicon layer. The scanning of linear energy beam is performed in such a manner that an edge portion of one irradiated region is overlapped by an edge portion of the next neighboring irradiated region in a plurality times of scanning of the linear energy beam thereby forming an overlapped region, and that a boundary to be formed between the overlapped region and non-overlapped region becomes non-linear in shape.
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patent: 5306651 (1994-04-01), Masumo et al.
patent: 5403762 (1995-04-01), Takemura
Chang Joni
Kabushiki Kaisha Toshiba
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