Front-illuminated CCD with open pinned-phase region and two-phas

Details Front-illuminated CCD with open pinned-phase region and two-phas Front-illuminated CCD with open pinned-phase region and two-phas

1990-08-06

1991-12-31

James, Andrew J.

Electrical pulse counters, pulse dividers, or shift registers: c

Counting or dividing in incremental steps

Beam type tube

357 30, 357 54, 377 60, 377 61, 377 62, 35821331, H01L 2978, H01L 2714, H01L 2934

Patent

active

050775928

ABSTRACT:
A front-illuminated CCD of relative high quantum efficiency (QE) and high charge transfer efficiency (CTE) utilizes an open-phase region for receiving photons and two-phase gate regions (.phi..sub.1 and .phi..sub.2) for transferring electrons collected in one pixel to the next. The open-phase region is implanted with additional n-type elements (phosphorus) in order to increase the potential of the CCD channel in the open-phase region for collection of electrons and additionally implanted with concentrated and very shallow p-type elements (boron) to pin the surface of the n-channel in the open-phase region to OV, while gate region .phi..sub.1 and .phi..sub.2 are biased to -3.5V and driven to +10V by a two-phase transfer clock. The open pinned-phase (OPP) region thus permits two-phase transfer clocking and optimum reception of photons during the integration periods between transfer clock pulses.

REFERENCES:
patent: 4498013 (1985-02-01), Karoda et al.
patent: 4649407 (1987-03-01), Kitamura et al.
patent: 4742381 (1988-05-01), Fujii
patent: 4760031 (1988-07-01), Janesick
patent: 4798958 (1989-01-01), Janesick et al.
patent: 4814844 (1989-03-01), Bluzer
patent: 4814848 (1989-03-01), Akimoto et al.
patent: 4822748 (1989-04-01), Janesick et al.
patent: 4851870 (1987-07-01), Miyatake
patent: 4992841 (1991-02-01), Halvis

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