Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With switching speed enhancement means
Patent
1996-12-16
1999-09-14
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
With switching speed enhancement means
257155, 257147, 257341, H01L 2974, H01L 31036
Patent
active
059526823
ABSTRACT:
A semiconductor device has a low lifetime layer in a selective portion of an N-type drain region to prevent a change in the element characteristic due to Fe contaminants, even if the device is kept at a high temperature. An impurity of a concentration of at least 10.sup.16 atoms/cm.sup.3 is deposited on a first main surface of the N-type drain region, and diffused into the region to a depth of 10 .mu.m, thereby forming a P-type anode region. An anode metal electrode is formed on the surface of the anode region. A P-type base region and an N-type source region are formed in a second main surface of the N-type drain region by ion injection or the like. A gate electrode is formed above the second main surface with a gate oxide film interposed therebetween. A metal gate electrode is formed in contact with the gate electrode. A source metal electrode is formed on the source region and the base region so as to short-circuit them. The low lifetime layer is formed in a selective portion of the N-type drain region.
REFERENCES:
patent: 4972239 (1990-11-01), Mihara
patent: 5023696 (1991-06-01), Ogino
patent: 5068704 (1991-11-01), Nakagawa
Solid State Electronics, vol. 35, No. 5, pp. 681-685, May 1, 1992, T. Laska, et al., "A 2000 V Non-Punchthrough IGBT with High Ruggedness".
Electric Design, vol. 43, No. 23, pp. 37/38, Nov. 6, 1995, Frank Goodenough, "New Float-Zone Process UPS Switching Rate of IGBT's and Also Cuts Their Fabrication Cost".
Journal of Applied Physics, vol. 67, No. 11, pp. 6764-6771, Jun. 1, 1990, G. Zoth, et al., "A Fast, Preparation-Free Method to Detect Iron in Silicon".
Jackson, Jr. Jerome
Kabushiki Kaisha Toshiba
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