Structure for passivating a PN junction

Details Structure for passivating a PN junction Structure for passivating a PN junction

1983-03-18

1988-05-03

Clawson, Jr., Joseph E.

357 58, 357 59, 357 90, H01L 2934

Patent

active

047423846

ABSTRACT:
A technique for passivating a PN junction adjacent a surface of a semiconductor substrate comprises coating the area of the surface adjacent the PN junction with a layer of hydrogenated amorphous silicon containing between about 5 and about 50 atomic percent of hydrogen.

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Webster's New World Dictionary, Second college Ed., .COPYRGT.1972, World Publishing Co., p. 1541.
Pankove et al., "Photoluminescence of Hydrogenated Amorphous Silicon", Applied Physics Letters, vol. 31, No. 7, Oct. 1, 1977, pp. 450-451.
Tarng et al., "Passivation of p-n Junction in Crystalline Silicon by Amorphous Silicon," IEEE Transactions on Electron Devices, vol. ED-26, No. 11, Nov. 1979, pp. 1728-1734.
Hey et al., "The Role of Hydrogen in Amorphous Silicon Films Deposited by the Pyrolytic Decomposition of Silane," Solar Energy Materials, vol. 8, Nos. 1-3, Nov. 1982, pp. 215-230.

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