Method of fabricating a phase shifting reticle

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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G03F 900

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059521279

ABSTRACT:
Disclosed is a method of fabricating a phase shifting reticle in which phase shifters cover alternatively apertures of opaque light shielding chrome layer formed on a transparent glass plate. The opaque light shielding chrome layers are formed on a partial surface of the transparent glass plate. Both the opaque light shielding chrome layers and apertures thereof are covered with a thin silicon dioxide layer. A resist is applied on an entire surface of the thin silicon dioxide layer, followed by a patterning of the resist. The phase shifters of silicon dioxide are selectively formed in apertures of the resist pattern by use of a liquid phase epitaxial growth, after which the resist pattern is removed. The phase shifter has an even thickness and a flat surface so as to permit a precise optical phase shift. The liquid phase epitaxial growth is used at a low temperature so that no deformation and no peel of the opaque light shielding chrome layer is occurred. The thickness of the phase shifter may easily controlled due to a low growth rate of the silicon dioxide layer serving as the phase shifter.

REFERENCES:
patent: 4612072 (1986-09-01), Morrison et al.
patent: 5045417 (1991-09-01), Okamoto
Jul. 1990 Nikkei Microdevices No. 61, pp. 103-114.
IEEE Transactions on Electron Devices, vol. ED-29, No. 12, Dec. 1982 "Improving Resolution in Photolithography with a Phase-Shifting Mask".

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