Integrated circuit adapted for improved thermal impedance

Details Integrated circuit adapted for improved thermal impedance Integrated circuit adapted for improved thermal impedance

1994-11-14

1996-07-02

Brown, Peter Toby

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257728, 257776, 343873, H01L 2352, H01L 23535, H01Q 140

Patent

active

055325068

ABSTRACT:
A flip-chip integrated circuit 1100 having a transistor 1108 formed at a frontside surface of a substrate 1104. An airbridge 1106 may be formed over portions of the transistor wherein a top surface of the airbridge is spaced from the frontside surface by a distance approximately equal to, or greater than, the thickness of the substrate. The circuit may also include a transmission line 1114 at the frontside surface and a heatsink 1102 coupled to the airbridge.

REFERENCES:
patent: 5202752 (1993-04-01), Honjo
patent: 5319237 (1994-06-01), Legros
patent: 5373185 (1994-12-01), Sato
W. S. Wong, W. D. Gray, and D. C. Wang, "Flip Chip Manufacturing Technology for GaAs MMIC," Hughes Aircraft Company, Microelectronic Circuits Division, 1993 GaAs Mantech, Conf.

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