Process for the production of dielectric thin films

Details Process for the production of dielectric thin films Process for the production of dielectric thin films

1994-12-05

1996-07-02

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Responsive to non-optical, non-electrical signal

257292, 257295, 257414, 257467, H01L 2714

Patent

active

055325041

ABSTRACT:
There is provided a process for producing a dielectric thin film of a compound oxide of a high-melting metal and a low-melting metal by vapor-depositing the compound oxide onto a substrate, wherein the improvement comprises irradiating a laser beam onto the substrate or to the vapor phase during vapor deposition.
There is also provided a pyroelectric type of sensor comprising: a MOS element including a drain electrode, a source electrode, a gate electrode and an Si semiconductor and a film of a ferroelectric or pyroelectric material formed on the drain electrode, the drain electrode being made of a material which exhibits a good ohmic contact with Si or SiO.sub.2 and has a lattice constant close to that of ferroelectric or pyroelectric material.

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patent: 5047385 (1991-09-01), Beasley et al.
patent: 5182614 (1993-01-01), Tran et al.
Cullity, "Elements of X-Ray Diffraction", Addison Wesley, Jan. 1978, pp. 32-39.

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