Integrated insulated-gate field-effect transistor circuit for ev

Details Integrated insulated-gate field-effect transistor circuit for ev Integrated insulated-gate field-effect transistor circuit for ev

1983-01-25

1988-05-03

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307363, 307584, H03K 17687

Patent

active

047422530

ABSTRACT:
The circuit merely comprises three transistors, namely one transfer transistor (t) arranged between the input (e) and the output (a), a load transistor (l) connected as a resistor, and a clamping transistor (k), with both of the latter connecting the output (a) to the source of operating voltage (U). The interconnected gates of both the clamping and the transfer transistor (k, t) are connected to a source of reference voltage (Ur). If these two transistors (k, t) are of the depletion type, the two gates thereof may be connected to the zero point of the circuit. The circuit is particularly quick and simple.

REFERENCES:
patent: 4308468 (1981-12-01), Olson
patent: 4375600 (1983-03-01), Wu
patent: 4388541 (1983-06-01), Giebel
patent: 4443718 (1984-04-01), Hagiwara et al.
patent: 4459497 (1984-07-01), Kuo et al.

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