Method for manufacturing DRAM capacitor

Details Method for manufacturing DRAM capacitor Method for manufacturing DRAM capacitor

1998-01-20

1999-09-14

Talbot, Brian K.

Coating processes

Electrical product produced

Condenser or capacitor

438255, 438398, B05D 512, H01L 218242

Patent

active

059520396

ABSTRACT:
A method for manufacturing DRAM capacitor that utilizes a self-aligned operation to form a forked-shaped capacitor structure having dual trenches or a multiple of trenches. No additional masking steps are required, and the uneven surface produced by the method of this invention is able to increase the surface area of the lower electrode. Hence, a high capacitance for the DRAM capacitor is obtained and a high level integration of DRAM cells can be realized.

REFERENCES:
patent: 5429980 (1995-07-01), Yang et al.
patent: 5447878 (1995-09-01), Park et al.
patent: 5650351 (1997-07-01), Wu
patent: 5656532 (1997-08-01), Tseng
patent: 5728617 (1998-03-01), Tseng

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