Semiconductor IC with multilayered Al wiring

Details Semiconductor IC with multilayered Al wiring Semiconductor IC with multilayered Al wiring

1995-01-17

1997-06-24

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257767, H01L 2348

Patent

active

056419937

ABSTRACT:
On an insulating film covering the surface of a semiconductor substrate, a lower wiring layer made of Al or Al alloy is formed. An insulating film having a contact hole is formed on the lower wiring layer and the substrate. An upper wiring layer made of Al or Al alloy is formed on the insulating film and connected to the lower wiring layer via the contact hole. In such a multilayered wiring structure, the size of Al grain of the lower wiring layer, at least at the surface just under the contact hole, is made smaller than the bottom size of the contact hole. With this setting, Al atoms are supplied sufficiently from the lower wiring layer to the interface between the lower and upper wiring layers, preventing wiring disconnection caused by the peeling off of the interface.

REFERENCES:
patent: H274 (1987-05-01), Ruggerio
patent: 4206472 (1980-06-01), Chu et al.
patent: 4924295 (1990-05-01), Kuecher
patent: 4937652 (1990-06-01), Okumura et al.
patent: 4976809 (1990-12-01), Broadbent
patent: 4989064 (1991-01-01), Kubokoya et al.
patent: 5018001 (1991-05-01), Kondo et al.
patent: 5184205 (1993-02-01), Shibata
patent: 5187561 (1993-02-01), Hasunuma et al.
patent: 5428251 (1995-06-01), Naito et al.
Howard et al., Fabrication of Intermetallic Diffusion Bamer for Electromigration in Narrow-Linesstnipes. IBM TDB vol. 20, No. 9, Feb. 1978, pp. 3477-3499.
IBM TDB vol. 20, No. 9, 2178 Fabrication of Intermetallic Diffusion Bamer for Electromigration in Narrow-Line Stripes, Howard et al, pp. 3477-3499.
Yamaha, Takahisa, et al., "Three Kinds of Via Electromigration Failure Mode In Multilevel Interconnections", Institute of Electrical and Electronics Engineers, Inc., San Diego, Ca., Mar.-Apr., 1992, pp. 349-355.
Yamaha, Masahisa, et al., The Institute of Electronics, Information and Communication Engineers, Technical Report vol. 91, No. 332, (1991) pp. 43-44.
Thin Film Handbook, p. 179, edited by Japan Gakujutu Shinkokai.

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