Method for producing a semiconductor device

Details Method for producing a semiconductor device Method for producing a semiconductor device

1987-08-19

1988-05-03

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437203, 437245, 437246, 437189, 437190, 437192, 156664, 357 68, 357 67, 357 71, H01L 2160, H01L 2192

Patent

active

047420235

ABSTRACT:
A method for producing a semiconductor device comprises the steps of: forming an insulating layer on a semiconductor substrate provided with an electrode portion thereon, forming a barrier metal layer over the entire surface thereof, forming a groove in the barrier metal layer so that the groove surrounds the electrode portion, burying a stopper material in the groove, forming a bump on the barrier metal layer positioned on the electrode portion, and removing the barrier metal layer outside of the stopper. The stopper prevents the removal of the inside barrier metal layer during the removal of the outside barrier metal layer.

REFERENCES:
patent: 3458925 (1969-08-01), Napier et al.
patent: 3462349 (1969-08-01), Gorgenyi
patent: 3585713 (1971-06-01), Kaneda et al.
patent: 3686698 (1972-08-01), Akeyama et al.
patent: 3689332 (1972-09-01), Dietrich et al.
patent: 3761309 (1973-09-01), Schmitter et al.
patent: 3821785 (1974-06-01), Rose

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