Implantation method for forming Schottky barrier photodiodes

Fishing – trapping – and vermin destroying

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437175, 357 15, 357 17, H01L 21425, H01L 2948

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active

047420170

ABSTRACT:
A Schottky barrier photodiode for detecting infrared radiation uses implantation of metal ions to form a metal silicide. An annular N+ type silicon guard ring is formed in a p-type silicon substrate. Metal ions are implanted into the exposed surface area of the silicon substrate surrounded by the silicon guard ring. The resulting structure is annealed to form a silicide of the implanted metal. A portion of the silicon substrate encircled by the silicon guard ring and above the metal silicide is removed. A thin oxide passivating layer is formed above the metal silicide.

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