Multilayer interconnection structure for a semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

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257773, 257774, 257775, 257776, H01L 2348

Patent

active

055613276

ABSTRACT:
A multilayer interconnection structure for a semiconductor device improving the integration degree of the semiconductor device and reducing the contact resistance. This interconnection structure comprises a lower interconnection layer having a predetermined constant width, an insulating layer provided on the lower interconnection layer and having a contact hole which is vertically placed on the lower interconnection layer and has a width larger than that of the lower interconnection layer, and an upper interconnection layer laid on the insulating layer such that it is connected to the lower interconnection layer through the contact hole. The upper interconnection layer has an enlarged portion at each side of or at only a side of its section corresponding to the contact hole. The enlarged portion extends toward a longitudinal direction of the lower interconnection layer.

REFERENCES:
patent: 4587549 (1986-05-01), Ushiku
patent: 4656732 (1987-04-01), Teng et al.
patent: 4716452 (1987-12-01), Kondoh et al.
patent: 4916521 (1990-04-01), Yoshikawa et al.

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