Method for forming an electrode and/or wiring layer by reducing

Details Method for forming an electrode and/or wiring layer by reducing Method for forming an electrode and/or wiring layer by reducing

1995-03-17

1996-10-01

Fourson, George

Fishing, trapping, and vermin destroying

437192, 437203, 437235, 437245, H01L 2128

Patent

active

055610820

ABSTRACT:
The present invention provides a method of manufacturing a semiconductor device, including the steps of forming a metal oxide film made of a metal oxide having a decrease in standard free energy smaller than a decrease in standard free energy of hydrogen oxide or of carbon oxide, on an insulating film formed on a semiconductor substrate, forming a metal oxide film pattern by subjecting a treatment to the metal oxide film, and converting said metal oxide pattern into at least one of an electrode and a wiring made of a metal which is a main component constituting the metal oxide, by reducing the metal oxide film pattern at a temperature of 80.degree. to 500.degree. C.

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F. Brecelj et al. "Reduction of Metal oxide thin layers by hydrogen plasma"., Vacuum, 40(1-2), 1990, pp. 177-178.
Z. Hammadi et al., "Chemical-vapor deposition of metallic copper film in the presence of oxygen", J. Appl. Phys. 73(10), 15 May 1993, pp. 5213-5215 .

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