Crystal grain diffusion barrier structure for a semiconductor de

Details Crystal grain diffusion barrier structure for a semiconductor de Crystal grain diffusion barrier structure for a semiconductor de

1989-04-14

1991-02-05

Mintel, William

357 60, 357 65, 357 68, 357 2, 357 59, H01L 2348

Patent

active

049909975

ABSTRACT:
A diffusion barrier structure includes a first barrier layer provided on a substrate of a semiconductor device for preventing transport of component elements of the substrate and the electrode from passing therethrough by diffusion. An interface layer is formed in the first barrier layer adjacent to a top surface of the first barrier layer for eliminating the effect of microstructure in the first barrier layer on crystal growth to be made on the first barrier layer. A second barrier layer of a same material as the material of the first barrier layer is provided on the first barrier layer so as to be sandwiched between the first barrier layer and the metal electrode for preventing the component elements from being transported therethrough by diffusion.

REFERENCES:
patent: 4702967 (1987-10-01), Black et al.
patent: 4829363 (1989-05-01), Thomas et al.
Ting et al., "The Use of Titanium-Based Contact Barrier Layers in Silicon Technology," Thin Solid Films, vol. 96, No. 4, Oct. 1982, pp. 327-345.
Lee et al, "Effect of Oxygen on the Diffusion Barrier Properties," Proceedings 4th Intl. IEEE Multilevel Interconnection Conf., 15-18 Jun. 1987, Santa Clara, U.S.A., pp. 344-350.
Ho et al, "Use of Coherency Strains in Epitaxial Multilayers to Inhibit Circuit Failure by Electromigration", IBM Technical Disclosure Bulletin, vol. 15, No. 12, May 1983, pp. 3742-3744.
Wittmer, "Barrier Layers: Principles and Applications in Microelectronics," J. Vac. Sci. Technol. A, vol. 2, No. 2, Apr.-Jun. 1984, pp. 273-280.
Howard, "Electromigration Improvement of Al-Cu or Au Conductors," IBM Technical Disclosure Bulletin, vol. 21, No. 12, May, 1979, 4837-4838.
Ho, "General Aspects of Barrier Layers for Very-Large-Scale Integration Applications I: Concepts," Thin Solid Films, 96 (1982) 301-316.
M. --A. Nicolet, "Diffusion Barrier in Thin Films", Thin Solid Films, vol. 52, pp. 415-443.
J. B. Stimmel and B. N. Mehrotra, "Effects of Oxygen on Reactively Sputtered Tin Films", In: Tungsten and Other Refractory Metals for VLSI Applications III (V. A. Wells ed.), pp. 375-382, materials Research Society, 1988.

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