SOS extrinsic infrared detector and read-out device

Details SOS extrinsic infrared detector and read-out device SOS extrinsic infrared detector and read-out device

1976-07-15

1978-06-06

Miller, Jr., Stanley D.

Radiant energy

Ionic separation or analysis

Static field-type ion path-bending selecting means

250370, 357 30, 357 80, H01L 2978, H01L 2714

Patent

active

040939570

ABSTRACT:
A silicon-on-sapphire, or silicon-on-spinel (SOS), epitaxial detector and readout structure and method of preparation. The present structure comprises silicon devices formed on sapphire, or spinel, substrates in which delineated silicon detectors, and electrically and optically isolated charge-coupled devices (CCDs), are used for signal readout from the detectors. The structure may be placed at the focal plane of an imaging infrared (IR) system for signal readout therefrom.

REFERENCES:
patent: 3849651 (1974-11-01), Ennulat
patent: 3883437 (1975-05-01), Nummedal et al.
Gerritsen et al., "An Infrared Image Converter Equipped with an Array of rinsic Silicon Photodetectors", IEE Transactions on Electron Devices, vol. Ed. 18, No. 11, Nov. 1971, pp. 1011-1015.

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