Process for fabrication, by means of epitaxial recrystallization

Details Process for fabrication, by means of epitaxial recrystallization Process for fabrication, by means of epitaxial recrystallization

1986-12-22

1988-12-06

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 46, 437 99, H01L 2136

Patent

active

047896442

ABSTRACT:
A process for fabrication, by epitaxial recrystallization, of insulated-gate field-effect transistors with junctions of minimum depth, includes the formation of a layer of polycrystalline silicon on a substrate of monocrystalline silicon in predetermined areas to form source and drain regions of an insulated-gate field-effect transistor, aligned with a gate electrode of this transistor. Doping impurities are then introduced in the layer by ion implantation, using an implantation energy sufficient to render the entire layer of polycrystalline silicon amorphous and so as to pass the polycrystalline to monocrystalline interface. Finally, epitaxial recrystallization of the silicon rendered amorphous, starting from the substrate itself, in predetermined areas, is effected by a low-temperature heat treatment.

REFERENCES:
patent: 3900345 (1975-08-01), Lesk
patent: 4463492 (1984-08-01), Maeguchi
patent: 4609407 (1986-09-01), Masao et al.

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