High voltage standoff MOS driver circuitry

Details High voltage standoff MOS driver circuitry High voltage standoff MOS driver circuitry

1979-06-29

1981-10-20

Dixon, Harold A.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307355, 307584, 361 56, 361117, H01L 0000, H02H 900

Patent

active

042963354

ABSTRACT:
MOS circuitry conducting constant current at high voltage comprises first, second and third depletion mode MOSFETs connected in a loop, with their gates joined at the junction of the second and third MOSFETs. A control circuit is coupled to the junction of the first and second MOSFETs. The drain of an enhancement mode fourth MOSFET is connected to the junction of the second and third MOSFETs while its source remains unconnected. With high voltage applied to the junction of the first and third MOSFETs, and with the control circuit essentially nonconductive, the fourth MOSFET experiences diode breakdown, thereby acting as a high voltage source which prevents gate oxide rupture on the first, second and third MOSFETs and causing the first and second MOSFETs to become nonconductive until the control circuit is again rendered conductive.

REFERENCES:
patent: 3508084 (1970-04-01), Warner
patent: 3636385 (1972-01-01), Koepp
patent: 3676742 (1972-07-01), Russell et al.
patent: 3712995 (1973-01-01), Steudel
patent: 4061928 (1977-12-01), Kessler
patent: 4119870 (1978-10-01), Zibert

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