Field effect transistor including silicon oxide film and nitride

Details Field effect transistor including silicon oxide film and nitride Field effect transistor including silicon oxide film and nitride

1996-05-24

1997-07-15

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437 41GS, 437 42, 437241, H01L 21265

Patent

active

056482841

ABSTRACT:
An N type field effect transistor having a higher resistivity to hot carriers and exhibiting a higher current handling capability even when used at a low gate voltage, and a method of manufacturing such a transistor are provided. A nitrided oxide film is formed on a drain avalanche hot carrier injection region. The nitrided oxide film is highly resistive to drain avalanche hot carriers as compared to a silicon oxide film. The silicon oxide film is formed on a channel hot electron injection region. The silicon oxide film is highly resistive to channel hot electrons as compared to the nitrided oxide film. A major portion of a gate insulator film is a silicon oxide film. The silicon oxide film exhibits a higher current handling capability at a low gate voltage as compared to the nitrided oxide film.

REFERENCES:
patent: 4774197 (1988-09-01), Haddad et al.
Kusunoki, "Hot-Carrier-resistant Structure By Re-Oxidized Nitrided Oxide Sidewall For Hoghly Reliable and High Performance LDD MOSFETS", IEDM, IEEE, pp. 649-652. 1991.

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