Method of manufacturing bipolar transistor having emitter region

Details Method of manufacturing bipolar transistor having emitter region Method of manufacturing bipolar transistor having emitter region

1995-06-19

1997-07-15

Niebling, John

Fishing, trapping, and vermin destroying

437 59, 148DIG9, 148DIG10, 148DIG11, H01L 21265

Patent

active

056482795

ABSTRACT:
In a method of manufacturing a bipolar transistor, a collector region having a first portion and a second portion around the first portion is covered with an insulating film and a polysilicon layer is formed on the insulating film, the polysilicon layer having an opening. The insulating film is then selectively removed about an area that is larger than the area of the opening to thereby expose the first and second portions of the collector region and form a gap between a part of the polysilicon layer and the second portion of the collector region. The gap is then filled with a silicon layer and impurities are doped to form an intrinsic base region in the first portion, followed by forming a side wall space to make the opening smaller than the original area. Other impurities are then doped to form an emitter region in said intrinsic base region, and further, still other impurities are doped into the collector region through the silicon layer to form an external base region, in contact with the intrinsic base region.

REFERENCES:
patent: 4735911 (1988-04-01), Schaber
patent: 5204276 (1993-04-01), Nakajima et al.
patent: 5296391 (1994-03-01), Sato et al.
patent: 5424227 (1995-06-01), Dietrich et al.
patent: 5432104 (1995-07-01), Sato
patent: 5439833 (1995-08-01), Hebert et al.

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