Method for fabricating microwave heterojunction bipolar transist

Details Method for fabricating microwave heterojunction bipolar transist Method for fabricating microwave heterojunction bipolar transist

1995-06-07

1997-07-15

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437126, 437133, H01L 21265

Patent

active

056482787

ABSTRACT:
Generally, and in one form of the invention, a microwave heterojunction bipolar transistor suitable for low-power, low-noise and high-power applications having an emitter 108, a base 126 and a collector 24 is disclosed, wherein the base 126 is composed of one or more islands 126 of semiconductor material. The one or more islands 126 are formed so that they do not cross any boundaries of the active area 60 of the transistor.

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