Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1998-06-05
2000-07-04
Guay, John
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257758, 257784, 257752, H01L 23485
Patent
active
060843047
ABSTRACT:
A metallization structure comprises a semiconductor substrate and pre-formed multi-interconnect layer, which include a passivation layer deposited on the top copper layer of the multi-interconnect layer, a pad window, and a non-copper thin conductive film. The non-copper thin conductive film is deposited in the pad window to protect the top copper layer from exposure to the air. The non-copper thin conductive film includes aluminum, tantalum, TaN, TiN, or WN.
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Huang Yimin
Yew Tri-Rung
Guay John
Huang Jiawei
United Microelectronics Corp.
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