Structure of metallization

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

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257758, 257784, 257752, H01L 23485

Patent

active

060843047

ABSTRACT:
A metallization structure comprises a semiconductor substrate and pre-formed multi-interconnect layer, which include a passivation layer deposited on the top copper layer of the multi-interconnect layer, a pad window, and a non-copper thin conductive film. The non-copper thin conductive film is deposited in the pad window to protect the top copper layer from exposure to the air. The non-copper thin conductive film includes aluminum, tantalum, TaN, TiN, or WN.

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patent: 5272376 (1993-12-01), Ueno
patent: 5804876 (1998-09-01), Lake et al.
patent: 5917244 (1999-06-01), Lee et al.

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