Unique chemical mechanical planarization approach which utilizes

Details Unique chemical mechanical planarization approach which utilizes Unique chemical mechanical planarization approach which utilizes

1997-12-31

2000-07-04

Utech, Benjamin

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

156345, H01L 21304

Patent

active

060838396

ABSTRACT:
The present invention is an improved apparatus and process for chemical mechanical polishing (CMP) layers which have a low dielectric constant (k). The present invention uses a magnetic slurry and a magnetic coil for polishing the wafer with the magnetic slurry. By using a magnetic slurry and a magnetic coil the force used during polishing can be controlled resulting greater control over the CMP process during the polishing of low k materials.

REFERENCES:
patent: 5575707 (1996-11-01), Talieh et al.
patent: 5750440 (1998-05-01), Vanell et al.
patent: 5865891 (1999-02-01), Linliu

Affiliated with

Also associated with

Rating

Unique chemical mechanical planarization approach which utilizes does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Unique chemical mechanical planarization approach which utilizes, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Unique chemical mechanical planarization approach which utilizes will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1486073