Double mesa avalanche photodetector

Details Double mesa avalanche photodetector Double mesa avalanche photodetector

1984-09-14

1985-12-24

Sikes, William L.

357 13, 357 16, 357 56, H01L 2714

Patent

active

045610070

ABSTRACT:
The invention relates to a photodetector wherein the avalanche region is separated from the detector surfaces by a region in which the electric field under reverse bias will be less than in the avalanche region. This photodetector includes an absorptive region having a planar surface area surrounded by a non-planar surface area. A first region overlies the planar area and a second region of opposite conductivity type overlies both the first region and the non-planar area of the absorptive region. The high electric fields are restricted to the first region which is isolated from the surfaces of the photodetector.

REFERENCES:
patent: 4110778 (1978-08-01), Eden et al.
patent: 4116733 (1978-09-01), Olsen et al.
patent: 4442444 (1984-04-01), Osaka
patent: 4471370 (1984-09-01), Chen et al.
patent: 4473835 (1984-09-01), Forrest et al.
patent: 4481523 (1984-12-01), Osaka et al.
Nishida et al., Applied Physics Letters 35, 251 (1979).
Olsen et al., Journal of Electronic Materials 9, 977 (1980).

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