Method for increasing the performance of trenched devices and th

Details Method for increasing the performance of trenched devices and th Method for increasing the performance of trenched devices and th

Filed on

1987-11-13

Date issued

1990-01-09

Examiner

James, Andrew J.

Other Related Categories

357 55, 357 91, H01L 2978, H01L 2906

Type

Patent

Status

active

Patent number

048931608

Description

ABSTRACT:
A trenched device, such as a DMOS transistor, provides for higher breakdown voltages than possible using trenched devices of the prior art. The trench extends only into the epitaxial layer, thereby minimizing breakdown problems associated with prior art trench devices in which the trench extends into the more highly doped substrate. However, in order to achieve higher breakdown voltages, the dopant concentration is increased in that portion of the epitaxial layer surrounding the bottom of the trench. Thus, a novel trenched device is taught which achieves higher breakdown voltages by causing the trench to be surrounded by relatively highly doped material, while not requiring the trench to extend into the more highly doped substrate itself.

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patent: 4608584 (1986-08-01), Mihara
patent: 4672410 (1987-06-01), Miura et al.
Ueda et al., IEEE Trans. on Electron Devices, "An Ultra-Low On-Resistance Power MOSFET Fabricated by Using a Fully Self-Aligned Process", (Apr. 1987), vol. ED-34, No. 4, pp. 926-930.
Chang et al., IEEE Trans. on Electron Devices, "Self-Aligned UMOSFET's with a Specific On-Resistance of 1 m.multidot.cm.sup.2 ", (Nov. 1987), pp. 2329-2334.
Leistiko, Jr. and Grove, Solid State Electronics, "Breakdown Voltage of Planar Silicon Junctions", (1966), pp. 847-852.
Blanchard, A Dissertation Submitted to the Department of Electrical Engineering and the Committee on Graduate Studies of Stanford University, "Optimization of Discrete High Power MOS Transistors", (Dec. 1981), Chapter III, Maximizing the Breakdown Voltage of Vertical Power MOSFET Structures, pp. 16-32.

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