Semi-conductor power device assembly and method of manufacture t

Details Semi-conductor power device assembly and method of manufacture t Semi-conductor power device assembly and method of manufacture t

1981-06-12

1984-05-22

Davie, James W.

357 81, 29590, H01L 2314, H01L 2334

Patent

active

044504713

ABSTRACT:
A heat spreader has a thin ceramic layer plasma sprayed onto its lower surface which may be chamfered. The upper surface of the spreader is then plated with a thin nickel or gold layer and a semi-conductor power device is soldered to the latter. The spreader is then secured via the ceramic layer to a base material serving as a heat sink by a layer of epoxy resin loaded with silver particles. The thin ceramic layer electrically insulates the spreader from the base material but enables heat conduction therebetween. The application of the plasma sprayed ceramic layer to the spreader is easy and economical to effect.

REFERENCES:
patent: 3290564 (1966-12-01), Wolff
patent: 4356505 (1982-10-01), Lovinger et al.

Affiliated with

Also associated with

Rating

Semi-conductor power device assembly and method of manufacture t does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semi-conductor power device assembly and method of manufacture t, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semi-conductor power device assembly and method of manufacture t will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1481410