Static information storage and retrieval – Plural shift register memory devices
Patent
1988-01-21
1992-03-17
Bowler, Alyssa H.
Static information storage and retrieval
Plural shift register memory devices
G11C 700, G11C 1900
Patent
active
050974424
ABSTRACT:
A first-in, first-out memory (10) can store a programmable number of data words at respective address locations within a memory (76). A read address generator (50, 58) generates a read pointer for pointing to a read address location in the memory (76). A depth address generator (42) points to a depth address location in the memory that is displaced from the read address location by a predetermined number of address locations. This depth address generator (42) is incremented to a next read depth address responsive to a read pulse (20) issued from a read/write controller (12). A write address generator (80) points to a write address location within memory (76). A comparator (52) compares the value stored in the write address generator (42) to the read depth address location stored in depth address generator (42) and is operable to generate a FULL memory status flag (24) responsive to their equality. Preferably, the comparator (52) also compares the read address to the write address, and is operable to generate an EMPTY status flag (26) responsive to their equality.
REFERENCES:
patent: 3141153 (1964-07-01), Klein
patent: 3691536 (1972-09-01), Peterson
patent: 3972031 (1976-07-01), Riemenschneider
patent: 4222102 (1980-09-01), Jansen et al.
patent: 4297567 (1981-10-01), Herzner
patent: 4592019 (1986-05-01), Huang et al.
patent: 4599708 (1986-07-01), Schuster
patent: 4680733 (1987-07-01), Duforestel et al.
patent: 4694426 (1987-09-01), Mason
patent: 4751675 (1988-06-01), Knauer
patent: 4833655 (1989-05-01), Wolf et al.
FIFO RAM Controller Tackles Deep Data Buffering, by Tom Pai Computer Design Aug. 1, 1986 pp. 109-112.
Ward M. Dwayne
Williams Kenneth L.
Barndt B. Peter
Bowler Alyssa H.
Dolandson Richard
Hiller William E.
Texas Instruments Incorporated
LandOfFree
Programmable depth first-in, first-out memory does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Programmable depth first-in, first-out memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Programmable depth first-in, first-out memory will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1481278