Patent
1989-04-03
1992-03-17
James, Andrew J.
357 80, 357 81, H01L 2312, H01L 2182
Patent
active
050973185
ABSTRACT:
A cavity-down type package for a semiconductor device comprises an insulating base substrate on which the semiconductor device and another insulating cap substrate with plural outer connection terminals on its outer surface and with electrodes provided on conductive layers for electric conduction on its inner surface. The electrodes on the insulating base substrate and those on the insulating cap substrate are connected with each other by using conductive material such as bumps.
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Arakawa Hideo
Inoue Hirokazu
Okamoto Masahide
Tanaka Akira
Yamada Kazuji
Hitachi , Ltd.
James Andrew J.
Nguyen Viet Q.
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