Patent
1990-09-05
1992-03-17
Mintel, William
357 16, 357 4, 357 19, H01L 2714
Patent
active
050973061
ABSTRACT:
A method of wavelength selective detection of light is achieved using p-i-n type diode and an external resistor connected in series to the diode and applying a reverse bias voltage to said p-i-n type diode through the external resistor. Two bistable wavelength ranges are obtained in the photocurrent spectrum, and the wavelength selective light detection is achieved with an asymmetric coupled quantum well structure. A p-i-n type optical element having multiply stable responses includes a coupled quantum well structure i layer producing the anti-crossing phenomenon in response to varying electric fields. The structure includes relatively thick and relatively thin quantum well layers separated by and coupled through a relatively thin barrier layer.
REFERENCES:
patent: 4833511 (1989-05-01), Sugimoto
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Mintel William
Mitsubishi Denki & Kabushiki Kaisha
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