Method for forming diffusions having narrow dimensions utilizing

Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

29578, 29580, 148 15, 148174, 148175, 148187, 156643, 156653, 156657, 156662, 204192E, 357 20, 357 48, 357 49, 357 50, 357 54, 357 56, 357 59, H01L 21302, H01L 21225, H01L 2176

Patent

active

042093503

ABSTRACT:
A method for forming diffusions having narrow, for example, submicrometer dimensions in a silicon body which involves forming insulator regions on a silicon body, which insulator regions have substantially horizontal surfaces and substantially vertical surfaces. A layer having a desired dopant concentration is formed thereon, both on the substantially horizontal surfaces and the substantially vertical surfaces. Reactive ion etching of the layer acts to substantially remove only the horizontal layer and provides a narrow dimensioned layer having a desired dopant concentration in the substantially vertical surfaces. Heating of the body at a suitable temperature is accomplished so as to produce the movement of the dopant into the silicon body by diffusion to form diffusions having narrow, such as submicrometer dimensions, therein.

REFERENCES:
patent: 3398029 (1968-08-01), Yasufuku et al.
patent: 3730787 (1973-05-01), Murphy et al.
patent: 3966577 (1976-06-01), Hochberg
patent: 4026740 (1977-05-01), Owen
patent: 4037307 (1977-07-01), Smith
patent: 4103415 (1978-08-01), Hayes
patent: 4124933 (1978-11-01), Nicholas
patent: 4139442 (1979-02-01), Bondur et al.
patent: 4157269 (1979-06-01), Ning et al.
patent: 4160991 (1979-07-01), Anantha et al.
Critchlow, D. L., "High Speed Mosfet . . . Using Advanced Lithography" Computer, vol. 9, No. 2, Feb. 1976, pp. 31-37.
Pogge, H. B., ", Narrow Line With Masking Method" I.B.M. Tech. Discl. Bull., Nov. 1976, vol. 19, No. 6, 1976.
Abbas et al., "Extending Minimal Dimensions . . . Fabrication Processing" Ibid., vol. 20, No. 4, Sep. 1977, pp. 1376-1378.
Bersin, R. L., "Survey of Plasma Etching Processes" Solid-State Tech., May 1976, pp. 31-36.
Jambotkar, C. G., "Method for Reducing Emitter-Base Contact . . . "I.B.M. Tech. Discl. Bull., vol. 19, No. 12, May 1977, pp. 4601-4604.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for forming diffusions having narrow dimensions utilizing does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming diffusions having narrow dimensions utilizing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming diffusions having narrow dimensions utilizing will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1479538

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.