Silicon wafer with defined interstitial oxygen concentration

Details Silicon wafer with defined interstitial oxygen concentration Silicon wafer with defined interstitial oxygen concentration

1991-04-30

1992-03-17

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437247, 437946, 148 332, H01L 21324

Patent

active

050968394

ABSTRACT:
The ratio between variations in the oxygen concentration before and after a silicon wafer is subjected to two types of heat treatments in which the temperatures and processing times are different is defined. The silicon wafer is subjected to a first heat treatment, and the interstitial oxygen concentrations before and after the first heat treatment are respectively set to [Oi].sub.1ini and [Oi].sub.1af. The silicon wafer is successively subjected to second and third heat treatments, and the interstitial oxygen concentrations before and after the second and third heat treatments are respectively set to [Oi].sub.2ini and [Oi].sub.2af. At this time, the interstitial oxygen concentrations [Oi].sub.1ini, [Oi].sub.1af, [Oi].sub.2ini and [Oi].sub.2af are so set as to satisfy the condition that ([Oi].sub.2ini -[Oi].sub.2af)/[Oi].sub.1ini -[Oi].sub.1af).gtoreq.20.

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