Method of manufacturing field-effect transistors designed for op

Details Method of manufacturing field-effect transistors designed for op Method of manufacturing field-effect transistors designed for op

1975-12-05

1977-01-25

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 29580, 357 23, B01J 1700

Patent

active

040043410

ABSTRACT:
A method of manufacturing, making it possible to effect the simultaneous batch production in particular of field-effect transistors operating at frequencies in excess of 30 Gc/s, whose source and drain constitute two very narrow and very closely spaced bands, is provided. To this end, using a single masking operation, the source and drain of contacts are produced, these being covered by a chromium band. This band acts as a mask during the ion machining of a trench between the bands. The aluminium subsequently deposited, in particular in the trench, in order to form the gate of the transistor, is removed from the other regions of the structure by electrolytic etching. Along with the chromium, the aluminium serves as a mask during a final step of ion etching, which makes it possible to produce a "mesa" structure.

REFERENCES:
patent: 3330696 (1967-07-01), Ullery
patent: 3498833 (1970-03-01), Lehrer
patent: 3574010 (1971-04-01), Brown
patent: 3875656 (1975-04-01), Handy

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