Thin film photovoltaic device

Details Thin film photovoltaic device Thin film photovoltaic device

1980-10-24

1982-08-03

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

136260, 136256, 136258, 357 30, 357 67, 357 71, 148177, 148188, H01L 3106

Patent

active

043428797

ABSTRACT:
A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids.

REFERENCES:
patent: 2861909 (1958-11-01), Ellis
patent: 3679949 (1972-07-01), Uekusa et al.
patent: 4064521 (1977-12-01), Carlson
C. Feldman et al., "Vacuum Deposited Polycrystalline Silicon Solar Cells for Terrestrial Use, "Conf. Record, 14th IEEE Photovoltaic Specialists Conf. (1980).
C. Feldman et al., "Vacuum Deposited Polycrystalline Silicon Solar Cells, Conf. Record, 12th IEEE Photovoltaic Specialists Conf. (1976), pp. 100-105.

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