Method of manufacturing a semiconductor device isolated by a tre

Details Method of manufacturing a semiconductor device isolated by a tre Method of manufacturing a semiconductor device isolated by a tre

1992-06-30

1995-01-24

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 90, 148DIG15, H01L 21308

Patent

active

053842804

ABSTRACT:
A manufacturing method of semiconductor devices and semiconductor devices isolated by a trench portion. The trench portion is refilled with a Si epitaxial growth layer. The trench has a first insulating layer on its side wall and a second insulating layer formed by the oxidation in the self-alignment manner, as a cap layer, on the top portion of the trench. A semiconductor device formed on the substrate is isolated by the trench. The excessive leakage currents created by the stress between the substrate and the Si epitaxial layer are decreased. The concentration of the field effect at the corner portion of the trench is suppressed by the cap layer. The refilling step can be also made to a trench having the wider opening and another trench having the narrower opening simultaneously and uniformly.

REFERENCES:
patent: 4473598 (1984-09-01), Ephrath et al.
patent: 4566174 (1986-01-01), Yasuda et al.
patent: 4745081 (1988-05-01), Beyer et al.
patent: 4843025 (1989-06-01), Morita
patent: 5004701 (1991-04-01), Motokawa
Bipolar Deep Isolation Process, J. L. Mauer et al., Electrochemical Society Meeting, Extended Abstract No. 270, 1986, p. 404.
Junction Breakdown Instabilities In Deep Trench Isolation Structures, Y. L. Tsang et al., IEEE Transactions On Electron Devices, vol. 38, No. 9, Sep. 1991, pp. 2134-2138.

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