Method of producing silicon carbide MOSFET

Details Method of producing silicon carbide MOSFET Method of producing silicon carbide MOSFET

1993-11-10

1995-01-24

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 41, 437100, 437913, 437984, 148DIG148, 257 77, H01L 21265

Patent

active

053842707

ABSTRACT:
In a method of producing a silicon carbide MOSFET, a predetermined conductivity type region having a predetermined depth is formed in an SiC layer through ion injection and heat treatment activation by utilizing the fact that the range of impurity ions at the time of ion injection can be controlled by an acceleration voltage to thereby avoid a disadvantage of an SiC crystal in which diffusion of impurity is hardly generated. For example, ions are injected into an n-type SiC semiconductor layer by using, as a mask, a gate electrode having an inclined surface at its end surface to thereby form a p-type region having a curved surface in an interface. Alternatively, a part of a p-type SiC epitaxial layer on an n-type SiC substrate is left as a p-type base layer, and an n-type region is formed through ion injection and connected to a substrate portion under the n-type region to thereby form an n-type base region.

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