Method of correcting mask pattern and mask, method of exposure,

Details Method of correcting mask pattern and mask, method of exposure, Method of correcting mask pattern and mask, method of exposure,

1996-07-15

2000-01-11

Couso, Jose L.

Image analysis

Applications

Manufacturing or product inspection

382145, 382151, G06K 900

Patent

active

060144564

ABSTRACT:
A method of correcting a mask pattern of a photo-mask used in a photo-lithographic process includes deforming the mask pattern to account for distortions in the pattern that will be caused during projection of the pattern by the photo-lithographic equipment so that the pattern image as transferred by the equipment matches a desired design pattern despite the distortions caused by the equipment. The method includes the steps of simulating a transfer image obtained by projecting a mask pattern through the exposure equipment under predetermined transfer conditions; arranging evaluation points on the transfer image; comparing the evaluation points of the simulated transfer image with the desired design pattern; and deforming the initial mask pattern in accordance with the differences between the simulated transfer image and the desired pattern. The method may also include repeating the foregoing steps to decrease the differences between the transfer pattern and the desired pattern. The evaluation points are arranged at corners and at predetermined intervals along the sides of the transfer pattern.

REFERENCES:
patent: 5008702 (1991-04-01), Tanaka et al.
patent: 5442418 (1995-08-01), Murakami et al.
patent: 5631110 (1997-05-01), Shioiri et al.
patent: 5736280 (1998-04-01), Tsudaka

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