Method of increasing the thickness of a field oxide

Details Method of increasing the thickness of a field oxide Method of increasing the thickness of a field oxide

1987-02-06

1988-01-26

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437233, 437238, 437241, 156657, 156653, 148DIG117, H01L 2194, H01L 2195

Patent

active

047216875

ABSTRACT:
A method of manufacturing a semiconductor substrate, and, in particular, a technique of electrically isolating a semiconductor element formed on a semiconductor substrate. The method comprises the steps of depositing a silicon oxide layer on the surface of a silicon substrate, for its protection; forming a silicon nitride layer on the silicon oxide layer; selectively eliminating the silicon nitride layer; oxidizing the silicon substrate, with the retained silicon nitride layer being used as a mask, thereby providing an oxide layer; depositing a polycrystalline silicon layer on the oxide layer and the retained acid-resisting layer; oxidizing the polycrystalline silicon layer to provide an insulation layer; eliminating the insulation layer until the silicon nitride layer is exposed; and removing all the silicon nitride layer. The method is capable of enabling the formation of a thick semiconductor element-isolating oxide layer, with a high precision, in a narrow region from which the semiconductor element is to be isolated.

REFERENCES:
patent: 4407696 (1983-10-01), Han et al.
patent: 4539744 (1985-09-01), Burton
patent: 4594769 (1986-06-01), Ellwanger
patent: 4612701 (1986-09-01), Cox
Ghandhi, S., "VLSI Fabrication Principles", 1983, pp. 576-577.

Affiliated with

Also associated with

Rating

Method of increasing the thickness of a field oxide does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of increasing the thickness of a field oxide, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of increasing the thickness of a field oxide will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1468021