Method for forming a buried layer and a collector region in a mo

Details Method for forming a buried layer and a collector region in a mo Method for forming a buried layer and a collector region in a mo

1985-12-20

1988-01-26

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 31, 437 51, 437 59, 437151, H01L 2120

Patent

active

047216840

ABSTRACT:
A method for forming a buried layer below the collector region of a transistor of an integrated circuit uses a second doping agent (e.g.--small amounts of phosphorus) in addition to a main doping agent (e.g.--antimony). The use of the second doping agent solves the problem of undesired intermediate or phantom layers caused by the external diffusion (i.e.--out-diffusion) of the doping agent in a P-type doped isolation layer below the buried layer. The use of the second doping agent also solves the problem of providing a collector region for transistors of the integrated circuit with a concentration of impurities which is typically 10 times higher than that of the collector region of a power transistor integrated monolithically on the same chip. The use of the second doping agent finally makes it possible to achieve collector regions for the transistors of the integrated circuit with a concentration of impurities which differs from transistor to transistor in accordance with the circuit functions to be carried out.

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Vara, M. B. "A Self Isolation Scheme for Integrated Circuits", IBM J. Research and Development, vol. 15, No. 6, pp. 430-435, 11/29/71.
Ghandhi, S. K., "VLSI Fabrication Principles", 1983, p. 171.

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