Extrinsic infrared detector with a charge reset function

Details Extrinsic infrared detector with a charge reset function Extrinsic infrared detector with a charge reset function

1982-03-15

1984-12-11

Munson, Gene M.

357 24, 357 58, H01L 2714, H01L 3100, H01L 2978, H01L 2912

Patent

active

044881657

ABSTRACT:
A preferred embodiment of the invention is a three-gate charge-coupled device (CCD) which is designed to operate at cryogenic temperatures (circa 1-20.degree. K). For an N channel device, a low-concentration N type material is separated from a P type substrate by a thin layer of intrinsic material. The active detection area is underneath a transparent detector gate which functions as the device's input gate. Electrons excited into the conduction band under the detector gate flow into the conduction band under the adjoining second gate which functions as an integrating gate by collecting the electrons that flow from under the input gate. The third gate also adjoins the second gate and is called the readout gate. When the readout gate is at a low potential, it dams up the electrons in the conduction band under the integrate gate. When the readout gate is at a potential at least as high as that of the integrate gate, the electrons may flow into a drain which adjoins the readout gate provided that the drain is at a potential higher than that of the readout gate; otherwise, electrons may flow from the drain into the conduction band underneath all three gates if the drain has the lowest potential of the four. Such a device may be constructed as a monolithic two-dimensional array with the drains extending in the Y-direction and the gates extending in the X-direction. Electrons lost by absorption of photons may thus be replaced.

REFERENCES:
patent: 3898685 (1975-08-01), Engeler et al.
patent: 4093872 (1978-06-01), Hartman et al.
patent: 4200892 (1980-04-01), Weimer
patent: 4228365 (1980-10-01), Gutierrez et al.
patent: 4322638 (1982-03-01), Lee et al.
Howes et al., "Charge Coupled Devices & Systems", John Wiley & Sons, pp. 284-295, (1979).
Takahashi et al., "A Monolithic IXIO Array of InGaAsp/InP Photodiodes with Small Dark Current and Uniform Responsivities", IEEE J. Wuantum Electronics, vol. QE-17, No. 2, pp. 239-242, Feb. 1981.
White et al., "A Multiple-Gate CCD-Photodiode Sensor Element for Imaging Arrays", IEEE Trans. on Electron Devices, vol. ED-25, No. 2, pp. 125-131, Feb. 1978.

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