Piezoelectric thin-film device process for manufacturing the sam

Details Piezoelectric thin-film device process for manufacturing the sam Piezoelectric thin-film device process for manufacturing the sam

1997-03-06

2000-01-11

Budd, Mark O.

Electrical generator or motor structure

Non-dynamoelectric

Piezoelectric elements and devices

310358, 310328, 310324, H01L 4108

Patent

active

060139706

ABSTRACT:
A piezoelectric thin-film device includes: a substrate and a piezoelectric thin film formed on the substrate, wherein a thickness of the piezoelectric thin film is 1 to 10 .mu.m, a crystal grain size of the piezoelectric thin film is 0.05 to 1 .mu.m, and a surface roughness (Rmax) of the piezoelectric thin film is no more than 1 .mu.m.

REFERENCES:
patent: 5376857 (1994-12-01), Takeuchi et al.
patent: 5537863 (1996-07-01), Fujiu et al.
patent: 5594292 (1997-01-01), Takeuchi et al.
patent: 5617127 (1997-04-01), Takeuchi et al.
patent: 5691594 (1997-11-01), Takeuchi et al.
patent: 5691752 (1997-11-01), Moynihan et al.
"Bending Actuator Using Lead Zirconate Titanate Thin Film Fabricated by Hydrothermal Method", Kikuchi et al.; Japanese Journal of Applied Physics, vol. 31, No. 9B, Sep. 1, 1992; pp. 3090-3093, XP000355714.

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